This equipment is mainly used for high-precision quality inspection of epitaxial wafer surfaces. By identifying and analyzing micron-level defects such as particles, contamination, and scratches, it can promptly detect surface anomalies that may affect subsequent processes and device performance, providing reliable support for product quality control and process optimization.
SiC epitaxial wafers is carried out throughout the entire process, from incoming materials and pretreatment to epitaxial growth, post-processing, and shipment. By deploying inspection at key process nodes, surface defects, contamination anomalies, and key process parameters are monitored throughout the entire process, ensuring stable and controllable product quality and improving the yield and consistency of epitaxial wafers.